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Annealsys: systems for RTP and CVD

Annealsys manufactures systems for Rapid Thermal Processing (RTP), Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD), using, for CVD and ALD, the advanced DLI (Direct Liquid Injection) technology. The Annealsys tools are especially indicated for R&D or small productions. 

The array of Thermal processes that are part of the Annealsys offer includes internal processes like Implant annealing and Ohmic contact annealing and surface modification processes like oxidation, nitridation, selenization and carbonization of silicon. As far as CVD is concerned, the available processes include RTCVD of graphene, hBN (hexagonal Boron Nitride), poly silicon, epitaxial silicon, SiO2 and SiNx. 

The gamma of Annealsys systems includes manual or cassette-to-cassette loading tools for various types of substrates. 

Below are some examples:

AS-MICRO

Applications

• Rapid Thermal Annealing (RTA)
• Implant annealing
• Ohmic contact annealing
• Rapid Thermal Oxidation (RTO)
• Rapid Thermal Nitridation (RTN)
• Densification and crystallization
• Diffusion of dopants

Main features

The system, designed specifically for R&D, handles substrates up to 3’’ diameter or 3’’x3’’ square, using susceptors for the smaller substrates. The temperature can go up to 1250° C, and is controlled using a pyrometer and a thermocouple.
Up to 4 process gas lines with digital mass flow controllers.

AS-ONE

Applications

• Rapid thermal annealing (RTA)
• Implant annealing
• Ohmic contact annealing (III-V and SiC)
• Rapid Thermal Oxidation (RTO)
• Rapid Thermal Nitridation (RTN)
• Selenization (CIGS solar cells)
• RTCVD of graphene and hBN

Main features

The system has been designed specifically for R&D or small productions (up to 10.000 wafers per year). Two different possible reactor dimensions to handle wafers up to 4’’ or 6’’ size, with the possibility of having up to 5 process gas lines with digital mass flow controller. In the standard version, the temperature can go up to 1250° C, in the high temperature version it can go up to 1450° C, and is always controlled with a pyrometer and a thermocouple.

AS-MASTER

Applications

• Rapid Thermal Annealing (RTA)
• Implant annealing
• Ohmic contact annealing (III-V and SiC)
• Silicon carbonization
• Rapid Thermal Oxidation (RTO)
• Rapid Thermal Nitridation (RTN)
• Diffusion, densification and crystallization
• Selenization
• Rapid Thermal CVD (Si poly, SiO2, SiNx)

Main features

The system, particularly fit for small productions, can handle wafers up to 200 mm, and is available in 4 different versions. Depending on the version, the temperature can go up to 1150° C, 1250° C or 1450° C, and is controlled using a pyrometer and a thermocouple.
Up to 8 process gas lines with digital mass flow controller.

AS-PREMIUM

Applications

• Rapid Thermal Annealing (RTA)
• Implant annealing
• Contact annealing (III-V and SiC)
• Rapid Thermal Oxidation (RTO)
• Rapid Thermal Nitridation (RTN)
• Selenization (CIGS solar cells)
• Sol-gel densification and crystallization

Main features

Designed to accomodate a wide range of configurations, AS-Premium can handle wafers up to 156×156 mm. The temperature can go up to 1100° C in the standard version, and up to 1300° C in the high temperature version and the double side heating version, which allows to heat the substrate from two sides. The temperature controle is done using a pyrometer and a thermocouple, and the system can go up to 8 process gas lines with digital mass flow controller.

MC-050

Applications

• Simple and multi-metallic oxides
• Metals, nitrides and alloys
• III-V, wide band gap semiconductors
• 2D and 3D materials

Main features

MC-050 is a system that handles wafers up to 2 inches and is designed specifically for R&D. It is very versatile and can run multiple processes in the same chamber: CVD, MOCVD, ALD, RTP or RTCVD. The system uses DLI (Direct Liquid Injection) vaporizers for a perfect control of the precursor flow, in addition to the possibility of using a vast number of precursors, including solids.

MC-100

Applications

• Simple and multi-metallic oxides
• Metals, nitrides and alloys
• III-V, wide band gap semiconductors
• 2D and 3D materials

Main features

MC-100 is a DLI-CVD/DLI-ALD system, which handles wafers up to 100 mm and is designed for R&D. The double configuration of the process chamber makes it possible to perform both CVD and ALD processes inside the same process chamber. The system uses DLI (Direct Liquid Injection) vaporizers for a perfect control of the precursor flow, in addition to the possibility of using a vast number of precursors, including solids.

MC-200

Applications

• Simple and multi-metallic oxides
• Metals, nitrides and alloys
• III-V, wide band gap semiconductors
• 2D and 3D materials

Main features

MC-200 is a DLI-CVD/DLI-ALD system that can manage wafers up to 200 mm. The system uses DLI (Direct Liquid Injection) vaporizers for a perfect control of the precursor flow, in addition to the possibility of using a vast number of precursors, including solids.
A capacitance plasma option allows also to run PECVD and PEALD to reduce deposition temperatures.